Effects of rapid thermal annealing in different ambients on structural, electrical, and optical properties of ZnO thin films by sol-gel method
- 5 February 2011
- journal article
- Published by Springer Science and Business Media LLC in Journal of Electroceramics
- Vol. 26 (1-4), 84-89
- https://doi.org/10.1007/s10832-011-9632-0
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Improvement of electrical properties of sol–gel derived ZnO:Ga films by infrared heating methodJournal of Sol-Gel Science and Technology, 2009
- Effects of annealing temperature of buffer layer on structural and optical properties of ZnO thin film grown by atomic layer depositionSolid State Communications, 2008
- Characteristics of ZnO thin film deposited by ion beam sputterJournal of the American Academy of Dermatology, 2007
- Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering systemJournal of Applied Physics, 2007
- Studies on growth of ZnO thin films by a novel chemical methodSolar Energy Materials and Solar Cells, 2007
- Investigation of ZnO films on Si substrate grown by low energy O+ assisted pulse laser deposited technologyMaterials Letters, 2007
- Influence of pH value on the quality of sol–gel derived ZnO filmsApplied Surface Science, 2007
- Low-voltage electroluminescence of europium in zinc oxide thin filmsApplied Physics Letters, 2007
- Transparent conductive Al-doped ZnO films for liquid crystal displaysJournal of Applied Physics, 2006
- Effect of thermal annealing treatment on structural, electrical and optical properties of transparent sol–gel ZnO thin filmsMaterials Research Bulletin, 2005