III–V compound semiconductor transistors—from planar to nanowire structures
- 14 August 2014
- journal article
- research article
- Published by Springer Science and Business Media LLC in MRS Bulletin
- Vol. 39 (8), 668-677
- https://doi.org/10.1557/mrs.2014.137
Abstract
No abstract availableKeywords
This publication has 99 references indexed in Scilit:
- Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer depositionApplied Surface Science, 2013
- Raman spectroscopy of self-catalyzed GaAs1−xSbxnanowires grown on siliconNanotechnology, 2013
- Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-depositionApplied Physics Letters, 2012
- InAs nanowire growth on oxide-masked 〈111〉 siliconJournal of Crystal Growth, 2012
- Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistorsNature, 2011
- Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETsMicroelectronic Engineering, 2011
- Roadmap for 22nm and beyond (Invited Paper)Microelectronic Engineering, 2009
- Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate DielectricIEEE Electron Device Letters, 2007
- Mobility enhancement in strained p-InGaSb quantum wellsApplied Physics Letters, 2007
- Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETsIEEE Electron Device Letters, 1998