Improvement of FinFET Electrical Characteristics by Hydrogen Annealing
- 26 July 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 25 (8), 541-543
- https://doi.org/10.1109/led.2004.832787
Abstract
Hydrogen anneal is used during FinFET processing to round off the corners of the silicon fins prior to gate oxidation and to smooth the surface of the fin sidewalls. This procedure greatly improves gate leakage and, in addition, reduces the width of the fins, resulting in a lower threshold voltage and improved drain-induced barrier lowering (DIBL) characteristics. Reduction of the leakage current by up to four orders of magnitude is obtained after edge rounding by hydrogen annealing. In addition, a 50% decrease of DIBL is observed, due to fin width reduction.Keywords
This publication has 9 references indexed in Scilit:
- Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etchingIEEE Electron Device Letters, 2003
- Shape transformation of silicon trenches during hydrogen annealingJournal of Vacuum Science & Technology A, 2003
- FinFET process refinements for improved mobility and gate work function engineeringPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High performance fully-depleted tri-gate CMOS transistorsIEEE Electron Device Letters, 2003
- Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETsIEEE Electron Device Letters, 2003
- Corner effect in multiple-gate SOI MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Impact of non-vertical sidewall on sub-50 nm FinFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Quantum-wire effects in thin and narrow SOI MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Pi-Gate SOI MOSFETIEEE Electron Device Letters, 2001