Raman study of GaAs-InxAl1−x As strained-layer superlattices

Abstract

Raman spectroscopy has been used to study the lattice‐mismatch strains in GaAs‐In_xAl_1−xAs strained‐layer superlattices grown by molecular beam epitaxy with the layer thicknesses of 10–200 Å and In content x of 0.11, 0.20, and 0.35. The strain‐induced shifts of the longitudinal optic phonon modes indicate that the GaAs and In_xAl_1−xAs layers have the tensile and compressive strains, respectively, along the interfaces. The strain calculated from the observed frequency shift agrees with the lattice‐mismatch strain given by the elastic theory.