Reduced nonthermal rollover of wide-well GaInN light-emitting diodes
- 26 January 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 94 (4), 041103
- https://doi.org/10.1063/1.3073860
Abstract
Nonthermal rollover (or efficiency droop) of the electroluminescence(EL) efficiency has been investigated for near-UV-emitting (AlGaIn)N single-well light-emitting diodes(LED) with varying GaInN well widths grown on substrates with different dislocation densities (DDs). For each DD the well width of the mesa-LEDs has been optimized for maximum EL efficiency at high operating currents. LEDs on freestanding GaN ( DD 4 × 10 7 cm − 2 ) with an 18 nm thick GaInN wide-well active region show the highest efficiency, and the output power-versus-current characteristic remains linear up to the highest pulsed current density of 750 A / cm 2 . In contrast, LEDs on sapphiregrown with conventional low-temperature nucleation ( DD 10 9 cm − 2 ) exhibit the optimum well width at 3 nm and show significant nonthermal rollover.This publication has 13 references indexed in Scilit:
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