High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature
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- 8 February 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (3), 225-227
- https://doi.org/10.1109/led.2009.2038806
Abstract
We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO2 gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. ZrO2 is one of the most promising high-k materials. The a-IGZO TFT (channel W/L = 240/30 ¿m) with ZrO2 shows high performance such as high on current of 2.11 mA and high field effect mobility of 28 cm2/(V·s) at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.Keywords
This publication has 16 references indexed in Scilit:
- Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3∕HfO2∕Al2O3 structureApplied Physics Letters, 2008
- Transparent, high mobility InGaZnO thin films deposited by PLDThin Solid Films, 2008
- Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodesThin Solid Films, 2007
- Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectricJournal of Applied Physics, 2007
- Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodesThin Solid Films, 2007
- Thermally stable, highly conductive, and transparent Ga-doped ZnO thin filmsThin Solid Films, 2007
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Ionic amorphous oxide semiconductors: Material design, carrier transport, and device applicationJournal of Non-Crystalline Solids, 2006
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- ZnO-based transparent thin-film transistorsApplied Physics Letters, 2003