Effects of strain on crystallization of amorphous silicon characterized by laser Raman spectroscopy
- 1 June 1997
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 117-118, 790-793
- https://doi.org/10.1016/s0169-4332(97)80184-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Device application and structure observation for hemispherical-grained SiJournal of Applied Physics, 1992
- Crystallization of Amorphous Silicon with Clean SurfacesJapanese Journal of Applied Physics, 1991
- Preferential nucleation along SiO2 steps in amorphous SiApplied Physics Letters, 1985