Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide
- 1 February 2012
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 51 (2), 21201
- https://doi.org/10.7567/jjap.51.021201
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In–Ga–Zn-Oxide Thin Film TransistorsJapanese Journal of Applied Physics, 2010
- Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film TransistorJapanese Journal of Applied Physics, 2010
- P‐9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In‐Ga‐Zn‐Oxide TFTSID Symposium Digest of Technical Papers, 2009
- 21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation LayerSID Symposium Digest of Technical Papers, 2009
- 15.2: Development of Driver-Integrated Panel Using Amorphous In-Ga-Zn-Oxide TFTSID Symposium Digest of Technical Papers, 2009
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide SemiconductorScience, 2003
- Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO SystemJournal of Solid State Chemistry, 1995
- The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°CJournal of Solid State Chemistry, 1991
- Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°CJournal of Solid State Chemistry, 1985