Outline and comparison of the possible effects present in a metal–thin–film–insulator–semiconductor

Abstract

The advantages possible with the insertion of a thin‐film insulating or semi‐insulating layer between a metal and a semiconductor to form MIS photovoltaic device have been presented previously in the literatue. This MIS configuration may be considered as a specific example of a more general class of photovoltaic devices: electrode–thin‐film‐insulator–semiconductor devices. Since the advantages of the configuration experimental interest in these photovoltaic devices. Because the previous analysis showed that the introduction of the insulator layer could produce several different but advantageous effects, this paper presents a further outline giving a comparison of these effects together with their ramifications.