A NEW IONIZING RADIATION DETECTION CONCEPT WHICH EMPLOYS SEMICONDUCTOR AVALANCHE AMPLIFICATION AND THE TUNNEL DIODE ELEMENT
- 15 September 1966
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (6), 227-230
- https://doi.org/10.1063/1.1754724
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Pulse formation and transit time of charge carriers in semiconductor junction detectorsNuclear Instruments and Methods, 1964
- Internal Pulse Amplification in Silicon p-n Junction Radiation Detection JunctionsReview of Scientific Instruments, 1964