Study of deep levels in CuInSe2 by deep level transient spectroscopy measurements on CdS/CuInSe2 solar cells
- 31 March 1989
- journal article
- Published by Elsevier BV in Solar Cells
- Vol. 26 (3), 197-214
- https://doi.org/10.1016/0379-6787(89)90081-1
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Characterization of CdS–CuInSe2 solar cells by current–voltage, capacitance–voltage, and capacitance-transient measurementsCanadian Journal of Physics, 1987
- The effect of deep states on the photovoltaic performance of CdZnS/CuInSe2 thin film devicesSolar Cells, 1986
- Current transport in boeing (Cd, Zn)/CuInSe2solar cellsIEEE Transactions on Electron Devices, 1984