First-principles modeling of resistance switching in perovskite oxide material
- 24 July 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (4), 042904
- https://doi.org/10.1063/1.2234840
Abstract
We report a first-principles study on Sr Ru O 3 ∕ Sr Ti O 3 interface in the presence of the oxygen vacancy. While the oxygen vacancy on the side of Sr Ti O 3 significantly lowers the Schottky barrier height, the oxygen vacancy close to the interface or inside the metallic electrode results in a Schottky barrier comparable to that of the clean interface. Based on these results, we propose a model for resistance-switching phenomena in perovskite oxide∕metal interfaces where electromigration of the oxygen vacancy plays a key role. Our model provides a consistent explanation of a recent experiment on resistance switching in Sr Ru O 3 ∕ Nb : Sr Ti O 3 interface.This publication has 21 references indexed in Scilit:
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