Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
- 1 December 2008
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 109 cycles, sufficient retention exceeding 10 years at 85degC. TaOx exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 mum CMOS process.Keywords
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