Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier
- 1 May 2010
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 3200-3203
- https://doi.org/10.1109/iscas.2010.5537946
Abstract
In this paper, we present analytical expressions for the waveforms and design equations for achieving the ZVS/ZDS conditions in the class-E power amplifier, taking into account the gate-to-drain parasitic capacitance of the MOSFET. We also give a design example along with PSpice simulation and experimental results. The voltage waveforms obtained from both the PSpice simulation and the circuit experiment achieved the class-E ZVS/ZDS conditions completely, which verify the analytical expressions. The results in this paper indicate that it is important to consider the effect of the MOSFET gate-to-drain capacitance for achieving the class E ZVS/ZDS conditions. The experimental power conversion efficiency achieved 92.8 % at output power Po = 4.06 W and operating frequency f = 7 MHz.Keywords
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