Resistivity and Temperature Coefficient of Thin Metal Films with Rough Surface
- 1 November 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (11)
- https://doi.org/10.1143/jjap.9.1326
Abstract
The thickness dependence of resistivity and its temperature coefficient of thin metal films has been studied. A theory is proposed to include, the surface roughness in determining the film resistivity, in addition to the reduced mean free path to conduction electrons. The ratio of the roughness to the mean free path, h/λ, is introduced as a convenient parameter. The thickness dependence of the resistivity predicted by the present theory agrees with the well known Fuchs-Sondheimer theory if h/λ=0. If h/λ>0, the discrepancy between the two theories increases with the decrease in film thickness. Satisfactory agreement between the theoretical and experimental results can be obtained by adjusting the value of h/λ.Keywords
This publication has 7 references indexed in Scilit:
- Electrical Conduction of Thin Metallic Films with Rough SurfaceJournal of Applied Physics, 1968
- Statistical Model for the Size Effect in Electrical ConductionJournal of Applied Physics, 1967
- Influence of Electric Field on the Growth of Thin Metal FilmsJournal of Applied Physics, 1966
- Electrical Conductivity of Thin Metallic Films with Unlike SurfacesJournal of Applied Physics, 1965
- Electrical Resistivity of Thin Single-Crystal Gold FilmsJournal of Applied Physics, 1963
- The mean free path of electrons in metalsAdvances in Physics, 1952
- The conductivity of thin metallic films according to the electron theory of metalsMathematical Proceedings of the Cambridge Philosophical Society, 1938