Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
- 1 December 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (11), 4186-4193
- https://doi.org/10.1063/1.335551
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1984
- Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- GaAs MESFET's fabricated on monolithic GaAs/Si substratesIEEE Electron Device Letters, 1984
- GaAs light-emitting diodes fabricated on Ge-coated Si substratesApplied Physics Letters, 1984
- GaAs Light Emitting Diodes Fabricated on SiO2/Si WafersJapanese Journal of Applied Physics, 1983
- Growth and Characterization of Epitaxial GaAs on Ge/Si SubstratesMRS Proceedings, 1983
- GaAs Shallow-homojunction solar cells on Ge-coated Si substratesIEEE Electron Device Letters, 1981
- Heteroepitaxy of vacuum-evaporated Ge films on single-crystal SiApplied Physics Letters, 1981