An electrically modifiable synapse array of resistive switching memory
- 4 August 2009
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 20 (34), 345201
- https://doi.org/10.1088/0957-4484/20/34/345201
Abstract
This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater than 10. To demonstrate a neural network circuit, we operated the cell array device as an electrically modifiable synapse array circuit and carried out a weighted sum operation. This demonstration of cross-point arrays, based on resistive switching memory, opens the way for feasible ultra-high density synapse circuits for future large-scale neural network systems.Keywords
This publication has 17 references indexed in Scilit:
- Memristive switching mechanism for metal/oxide/metal nanodevicesNature Nanotechnology, 2008
- Spike-timing-dependent learning in memristive nanodevicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- The missing memristor foundNature, 2008
- Reproducible resistance switching in polycrystalline NiO filmsApplied Physics Letters, 2004
- Nanometer-scale switches using copper sulfideApplied Physics Letters, 2003
- An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FET's using SrBi/sub 2/Ta/sub 2/O/sub 9/ thin filmsIEEE Electron Device Letters, 1999
- A floating-gate analog memory device for neural networksIEEE Transactions on Electron Devices, 1993
- Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory WeightsJapanese Journal of Applied Physics, 1993
- A nonvolatile analog neural memory using floating-gate MOS transistorsAnalog Integrated Circuits and Signal Processing, 1992
- Electronic neural network chipsApplied Optics, 1987