Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
- 14 April 2011
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 4 (5), 054202
- https://doi.org/10.1143/apex.4.054202
Abstract
No abstract availableKeywords
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