Dynamics of power MOSFET switching under unclamped inductive loading conditions
- 1 June 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (6), 1007-1015
- https://doi.org/10.1109/16.502137
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Effect of bipolar turn-on on the static current-voltage characteristics of scaled vertical power DMOSFET'sIEEE Transactions on Electron Devices, 1995
- Single-event gate rupture in vertical power MOSFETs; an original empirical expressionIEEE Transactions on Nuclear Science, 1994
- Optimum DMOS cell doping profiles for high-voltage discrete and integrated device technologiesIEEE Transactions on Electron Devices, 1992
- A high-density, self-aligned power MOSFET structure fabricated using sacrificial spacer technologyIEEE Transactions on Electron Devices, 1992
- Effect of p-base sheet and contact resistances on static current-voltage characteristics of scaled low-voltage vertical power DMOSFETsIEEE Electron Device Letters, 1991
- Effect of gate resistance on high-frequency power switching efficiencies of advanced power MOSFETsIEEE Journal of Solid-State Circuits, 1990
- Novel refractory contact and interconnect metallizations for high-voltage and smart-power applicationsIEEE Transactions on Electron Devices, 1990
- Second breakdown of vertical power MOSFET'sIEEE Transactions on Electron Devices, 1982
- Properties of ESFI MOS transistors due to the floating substrate and the finite volumeIEEE Transactions on Electron Devices, 1975
- Influence of the floating substrate potential on the characteristics of ESFI MOS transistorsSolid-State Electronics, 1975