IGBT History, State-of-the-Art, and Future Prospects
Top Cited Papers
- 13 February 2017
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 64 (3), 741-752
- https://doi.org/10.1109/ted.2017.2654599
Abstract
An overview on the history of the development of insulated gate bipolar transistors (IGBTs) as one key component in today's power electronic systems is given; the state-of-the-art device concepts are explained as well as an detailed outlook about ongoing and foreseeable development steps is shown. All these measures will result on the one hand in ongoing power density and efficiency increase as important contributors for worldwide energy saving and environmental protection efforts. On the other hand, the exciting competition of more maturing Si IGBT technology with the wide bandgap successors of GaN and SiC switches will go on.Keywords
This publication has 34 references indexed in Scilit:
- Trends and opportunities in intelligent power modules (IPM)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2015
- A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power CapabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- 1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraintsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Double-sided low-temperature joining technique for power cycling capability at high temperaturePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 600 V-IGBT with reverse blocking capabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTsIEEE Transactions on Electron Devices, 1991
- Comparison of n and p channel IGTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Improved COMFETs with fast switching speed and high-current capabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristorsElectronics Letters, 1979