Electronic transport in Heusler-type alloys
- 10 June 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 77 (22), 224415
- https://doi.org/10.1103/physrevb.77.224415
Abstract
The temperature variation of electrical resistivity and Seebeck coefficient of Heusler-type alloys have been investigated. All the studied alloys were crystallized into a single-phase cubic structure with space group. The shows a negative temperature coefficient of resistivity (TCR) for the sample, which turns into a positive TCR for the sample; while intermediate compositions show a resistivity minimum at low temperatures below 50 K. From the analysis of temperature dependence of the electrical resistivity data, we demonstrate a semiconductorlike to metal transition on B substitution in the alloy. With a minute substitution of isoelements (B and In) and nonisoelement (Si), changes drastically in its sign and magnitude accompanied by an appearance of a broad maximum at higher temperatures, which shifts toward high temperatures with increasing concentration of the substituents. These features are indicative of a dramatic modification in the band structures of the alloy with the substitution of elements. Although similar changes in and values with compositions of B-, In-, and Si-substituted alloys are observed, the decreases rapidly on B substitution and ultimately attains a metallic behavior, suggesting a true semiconductorlike to metal transition. The strong composition dependence of and on elemental substitution is attributed to the size, relative positions of the atomic levels and the number of valence electrons of the substituents.
Keywords
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