Control of metal impurities in “dirty” multicrystalline silicon for solar cells
- 1 October 2006
- journal article
- Published by Elsevier BV in Materials Science and Engineering B
- Vol. 134 (2-3), 282-286
- https://doi.org/10.1016/j.mseb.2006.06.023
Abstract
No abstract availableThis publication has 34 references indexed in Scilit:
- Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cellsJournal of Applied Physics, 2005
- Refining of Metallurgical-Grade Silicon by Thermal Plasma Arc MeltingMaterials Science Forum, 2005
- Boron Removal in Molten Silicon by a Steam-Added Plasma Melting MethodMATERIALS TRANSACTIONS, 2004
- Evaporation of Phosphorus in Molten Silicon by an Electron Beam Irradiation MethodMATERIALS TRANSACTIONS, 2004
- Recombination activity of copper in siliconApplied Physics Letters, 2001
- Improved High‐Purity Arc‐Furnace Silicon for Solar CellsJournal of the Electrochemical Society, 1985
- Solar grade silicon versus electronic grade silicon for photovoltaic applicationsJournal of Power Sources, 1984
- Solar-grade siliconJournal of Materials Science, 1982
- Solar grade silicon as a potential candidate material for low-cost terrestrial solar cellsSolar Energy Materials, 1982
- Solar Cells from Zone‐Refined Metallurgical SiliconJournal of the Electrochemical Society, 1978