Solid-liquid equilibria calculations for LPE of AlvGa1−uvInuAs on InP

Abstract
Detailed phase diagram calculations are presented for the quaternary Al v Ga1−u−v In u As alloys that are lattice matched to InP, and the experimental possibilities of growing AlGaInAs layers on InP by liquid‐phaseepitaxy are discussed. The calculations indicate that there is a very large distribution coefficient for Al which will make LPE of AlGaInAs difficult.