Theoretical analysis of hall factor and hall mobility in p-type silicon
- 30 September 1981
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 24 (9), 827-833
- https://doi.org/10.1016/0038-1101(81)90098-8
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- An Improved Model for Analyzing Hole Mobility and Resistivity in p‐Type Silicon Doped with Boron, Gallium, and IndiumJournal of the Electrochemical Society, 1981
- The doping concentrations of indium-doped silicon measured by Hall, C-V, and junction-breakdown techniquesJournal of Applied Physics, 1978
- Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation PotentialsPhysical Review B, 1963
- Hole and electron mobilities in doped silicon from radiochemical and conductivity measurementsJournal of Physics and Chemistry of Solids, 1960
- Hydrogen atom in a strong magnetic fieldJournal of Physics and Chemistry of Solids, 1956
- Energy band structure in p-type germanium and siliconJournal of Physics and Chemistry of Solids, 1956
- Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1955
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Transverse Hall and Magnetoresistance Effects in-Type GermaniumPhysical Review B, 1954
- Hall Mobility of Electrons and Holes in SiliconPhysical Review B, 1954