Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence
- 9 September 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (11), 1940-1942
- https://doi.org/10.1063/1.1506793
Abstract
Ultraviolet light emitting diodes (LEDs) have been grown using metalorganic vapor phase epitaxy, while monitoring the 550 nm reflected light intensity. During nucleation of GaN on sapphire, the transition from three-dimensional (3D) grain growth to two-dimensional (2D) coalesced growth was intentionally delayed in time by lowering the flow during the initial high temperature growth. Initially, when the reflectance signal is near zero, the GaN film is rough and composed of partly coalesced 3D grains. Eventually, the reflected light intensity recovers as the 2D morphology evolves. For 380 nm LEDs grown on 3D nucleation layers, we observe increased light output. For LEDs fabricated on GaN films with a longer recovery time an output power of 1.3 mW at 20 mA current was achieved.
Keywords
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