Homoepitaxial diamond films on diamond anvils with metallic probes: the diamond/metal interface up to 74 GPa
- 17 February 1997
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 9 (7), L67-L73
- https://doi.org/10.1088/0953-8984/9/7/001
Abstract
A (100)-oriented natural type-Ia brilliant-cut diamond anvil with thin zirconium electrical probes sputtered onto the culet was coated with an insulating film of diamond using microwave-plasma-enhanced chemical vapour deposition (MPCVD). The critical issue in this high-pressure study is the quality of the homoepitaxial diamond film and its correlation with the mechanical strength of the diamond film/metallic probe interface. We report the first high-pressure study on a homoepitaxial diamond film and underlying zirconium probes to a pressure of 74 GPa. The metallic probes were observed through a transparent lithium fluoride sample with ruby serving as a pressure sensor. After decompression, Raman spectroscopy revealed that the homoepitaxial film was free from deformation and delamination despite the presence of some -bonded carbon at the Zr/diamond interface and within the bulk of the film itself. The present study demonstrates that the presence of residual defects and graphitic impurities has no significant effect on high-pressure applications of homoepitaxial diamond films. This opens up new areas of research with diamond anvil cell devices including those of ohmic heating and electrical transport measurements at ultra-high pressures.Keywords
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