Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples
- 1 May 1996
- journal article
- Published by Elsevier BV in Journal of Non-Crystalline Solids
- Vol. 198-200, 165-169
- https://doi.org/10.1016/0022-3093(96)80019-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Optical and electrical properties of proton-implanted amorphous SiO2, GeO2SiO2, MgOP2O5 and nanocrystalline MgIn2O4: novel materials by proton implantationJournal of Non-Crystalline Solids, 1995
- Novel Transparent and Electroconductive Amorphous Semiconductor: Amorphous AgSbO3 FilmJapanese Journal of Applied Physics, 1995
- Preparation of Electroconductive and Transparent Thin Films of AgSbO3Journal of the Ceramic Society of Japan, 1995
- Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantationJournal of Applied Physics, 1994
- Field-effect measurements of carrier mobilities in transparent conducting films of amorphous indium oxideJournal of Physics: Condensed Matter, 1993
- Amorphous indium oxideThin Solid Films, 1991
- Structural ordering in annealed anodic oxide films on aluminiumPhilosophical Magazine Letters, 1990
- The Hall effect in vitreous 80V2O5—20P2O5Philosophical Magazine Part B, 1984
- Structural phase transitions of indium/indium oxide thin-film compositesApplied Physics Letters, 1982
- Interstitial doping of amorphous siliconApplied Physics Letters, 1977