Original shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling

Abstract

This work presents original nanowire transistor architectures leading to device performance improvement. The influence of channel geometrical patterns on nanowire metal-oxide-semiconductor-field-effect-transistor characteristics is investigated using three-dimensional real-space quantum-mechanical simulations. Our study shows that indented channel improves the on-off current ratio $\left(I_{\text{on}}/I_{\text{off}}\right)$ by 32%. This remarkable result is induced by both quasiresonances in the on-regime and more significantly by the presence of a thicker channel potential barrier in the subthreshold domain. We then demonstrate that an optimized indented channel represents a manufacturable opportunity to have a much better control of short channel effects in nanowire transistors.