Investigation of Cu2ZnSnS4-Based Thin Film Solar Cells Using Abundant Materials
- 1 January 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (1S)
- https://doi.org/10.1143/jjap.44.783
Abstract
Aiming to develop the solar cells free from both environmental contaminants and rare metals, thin film solar cells were produced by using Cu2ZnSnS4 (CZTS) as an absorber. CZTS thin films could be successfully formed by the vapor phase sulfurization of precursors prepared by the electron-beam evaporation on the soda-lime glass substrates. The atomic ratio of Cu/(Zn+Sn) was varied from nearly 0.5 to 1.2 to investigate the influence of the composition on the surface morphology and the optical properties. In order to optimize the sulfurization condition, we varied the sulfurization temperature from 510°C to 550°C. As the results, the value of the conversion efficiency of 4.53% was obtained for the cell of which CZTS absorber sulfurized at 520°C.Keywords
This publication has 6 references indexed in Scilit:
- Electrical and optical properties of CuZnSnS thin films prepared by rf magnetron sputtering processSolar Energy Materials and Solar Cells, 2002
- Characterization of Cu2ZnSnS4 Thin Films Prepared by Vapor Phase SulfurizationJapanese Journal of Applied Physics, 2001
- Development of thin film solar cell based on Cu2ZnSnS4 thin filmsSolar Energy Materials and Solar Cells, 2001
- Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of EB evaporated precursorsSolar Energy Materials and Solar Cells, 1997
- Sprayed films of stannite Cu2ZnSnS4Applied Surface Science, 1996
- Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin FilmsJapanese Journal of Applied Physics, 1988