Diameter-Dependent Electromechanical Properties of GaN Nanowires

Abstract

The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were measured using electromechanical resonance analysis in a transmission electron microscope. E is close to the theoretical bulk value (∼300 GPa) for a large diameter nanowire (d = 84 nm) but is significantly smaller for smaller diameters. At room temperature, Q is as high as 2800 for d = 84 nm, significantly greater than what is obtained from micromachined Si resonators of comparable surface-to-volume ratio. This implies significant advantages of smooth-surfaced GaN nanowire resonators for nanoelectromechanical system (NEMS) applications. Two closely spaced resonances are observed and attributed to the low-symmetry triangular cross section of the nanowires.