Origin of the metallic properties of heavily boron-doped superconducting diamond
- 1 December 2005
- journal article
- letter
- Published by Springer Science and Business Media LLC in Nature
- Vol. 438 (7068), 647-650
- https://doi.org/10.1038/nature04278
Abstract
The physical properties of lightly doped semiconductors are well described by electronic band-structure calculations and impurity energy levels1. Such properties form the basis of present-day semiconductor technology. If the doping concentration n exceeds a critical value nc, the system passes through an insulator-to-metal transition and exhibits metallic behaviour; this is widely accepted to occur as a consequence of the impurity levels merging to form energy bands2. However, the electronic structure of semiconductors doped beyond nc have not been explored in detail. Therefore, the recent observation of superconductivity emerging near the insulator-to-metal transition3 in heavily boron-doped diamond4,5 has stimulated a discussion on the fundamental origin of the metallic states responsible for the superconductivity. Two approaches have been adopted for describing this metallic state: the introduction of charge carriers into either the impurity bands6 or the intrinsic diamond bands7,8,9. Here we show experimentally that the doping-dependent occupied electronic structures are consistent with the diamond bands, indicating that holes in the diamond bands play an essential part in determining the metallic nature of the heavily boron-doped diamond superconductor. This supports the diamond band approach and related predictions, including the possibility of achieving dopant-induced superconductivity in silicon and germanium7. It should also provide a foundation for the possible development of diamond-based devices10.Keywords
This publication has 14 references indexed in Scilit:
- Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond FilmsPhysical Review Letters, 2004
- Role of the Dopant in the Superconductivity of DiamondPhysical Review Letters, 2004
- Three-Dimensional-Type Superconductivity in Hole-Doped DiamondPhysical Review Letters, 2004
- Superconductivity in Boron-Doped DiamondPhysical Review Letters, 2004
- Superconductivity in diamond thin films well above liquid helium temperatureApplied Physics Letters, 2004
- Layer-dependent band dispersion and correlations using tunable soft X-ray ARPESEurophysics Letters, 2004
- Superconductivity in diamondNature, 2004
- Ground-state electronic properties of diamond in the local-density formalismPhysical Review B, 1977
- X-Ray Photoemission Cross-Section Modulation in Diamond, Silicon, Germanium, Methane, Silane, and GermanePhysical Review B, 1973
- The nature of the acceptor centre in semiconducting diamondJournal of Physics C: Solid State Physics, 1971