A physics-based, unified gate-oxide breakdown model
- 22 January 2003
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Field and temperature acceleration model for time-dependent dielectric breakdownIEEE Transactions on Electron Devices, 1999
- Low electric field breakdown of thin SiO/sub 2/ films under static and dynamic stressIEEE Transactions on Electron Devices, 1997
- The silicon-silicon dioxide system: Its microstructure and imperfectionsReports on Progress in Physics, 1994