MEASUREMENT OF THE VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
- 15 January 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (2), 40-42
- https://doi.org/10.1063/1.1754837
Abstract
The electron velocity‐field characteristic of insulating GaAs has been measured by injecting electrons with an electron beam. The measuredlow field mobility is 7500 cm2/V‐sec with an initial negative differential mobility of −2400 cm2/V‐sec at a threshold field of 3.2 kV/cm.Keywords
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- Preparation of 0.5–103 Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystalsSolid State Communications, 1966
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