Chemical and electronic structures of Lu2O3/Si interfacial transition layer
- 1 June 2003
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 216 (1-4), 234-238
- https://doi.org/10.1016/s0169-4332(03)00425-2
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 11 references indexed in Scilit:
- Photoemission study of Zr- and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface chargeApplied Physics Letters, 2002
- Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectricsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopyJournal of Applied Physics, 2000
- Dielectric polarizabilities of ions in oxides and fluoridesJournal of Applied Physics, 1993
- Maximum entropy: A new approach to non‐destructive deconvolution of depth profiles from angle‐dependent XPSSurface and Interface Analysis, 1992
- A new ESCA instrument with improved surface sensitivity, fast imaging properties and excellent energy resolutionJournal of Electron Spectroscopy and Related Phenomena, 1990
- Microscopic structure of the/Si interfacePhysical Review B, 1988
- Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103Atomic Data and Nuclear Data Tables, 1985
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979