Study of P/E Cycling Endurance Induced Degradation in SANOS Memories Under NAND (FN/FN) Operation
- 18 May 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 57 (7), 1548-1558
- https://doi.org/10.1109/ted.2010.2048404
Abstract
Program/Erase (P/E) cycling endurance in poly-Si/Al2O3/SiN/SiO2/Si (SANOS) memories is systematically studied. Cycling-induced trap generation, memory window (MW) closure, and eventual stack breakdown are shown to be strongly influenced by the material composition of the silicon nitride (SiN) charge trap layer. P/E pulsewidth and amplitude, as well as starting program and erase flatband voltage (VFB) levels (therefore the overall MW), are shown to uniquely impact stack degradation and breakdown. An electron-flux-driven anode hole generation model is proposed, and trap generation in both SiN and tunnel oxide are used to explain stack degradation and breakdown. This paper emphasizes the importance of SiN layer optimization for reliably sustaining large MW during P/E operation of SANOS memories.Keywords
This publication has 32 references indexed in Scilit:
- Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) OperationIEEE Transactions on Electron Devices, 2009
- Scaling trends for random telegraph noise in deca-nanometer Flash memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperaturesApplied Physics Letters, 2006
- Investigation of Charge Loss in Cycled NBit Cells via Field and Temperature AccelerationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memoryApplied Physics Letters, 2005
- Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash MemoriesIEEE Transactions on Electron Devices, 2004
- Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide filmsJournal of Applied Physics, 2001
- Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structuresJournal of Applied Physics, 2001
- Band offsets of wide-band-gap oxides and implications for future electronic devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000