Field-Effect Transistors Assembled from Functionalized Carbon Nanotubes
- 5 April 2006
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (5), 906-910
- https://doi.org/10.1021/nl052473f
Abstract
We have fabricated field-effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing a hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices thus fabricated show excellent electrical characteristics.Keywords
This publication has 42 references indexed in Scilit:
- Carbon Nanotube Electronics and OptoelectronicsMRS Bulletin, 2004
- Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate DielectricsNano Letters, 2004
- Carbon nanotube electronicsProceedings of the IEEE, 2003
- Single-walled carbon nanotube electronicsIEEE Transactions on Nanotechnology, 2002
- Carbon nanotube films as electron field emittersCarbon, 2002
- Nonvolatile Memory and Programmable Logic from Molecule-Gated NanowiresNano Letters, 2002
- Carbon nanotubes: opportunities and challengesSurface Science, 2001
- A Laser Ablation Method for the Synthesis of Crystalline Semiconductor NanowiresScience, 1998
- Single-shell carbon nanotubes of 1-nm diameterNature, 1993
- Cobalt-catalysed growth of carbon nanotubes with single-atomic-layer wallsNature, 1993