Interface and gate bias dependence responses of sensing organic thin-film transistors

Abstract

The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source–drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.