Epitaxial praseodymium oxide: a new high-K dielectric
- 31 December 2003
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 47 (12), 2161-2165
- https://doi.org/10.1016/s0038-1101(03)00190-4
Abstract
No abstract availableKeywords
Funding Information
- Bundesministerium für Bildung und Forschung (01M3142D)
This publication has 8 references indexed in Scilit:
- Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)Journal of Applied Physics, 2002
- Growth of crystalline praseodymium oxide on siliconJournal of Crystal Growth, 2002
- Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctionsApplied Physics Letters, 2002
- Process Integration of Crystalline Pr2O3 High-k Gate DielectricsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealingApplied Physics Letters, 2001
- Pseudopotential study of PrO2 and HfO2 in fluorite phaseMicroelectronics Reliability, 2001
- Band offsets of wide-band-gap oxides and implications for future electronic devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- In Situ RHEED Observation of CeO2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-VacuumJapanese Journal of Applied Physics, 1990