Defect-free InP nanowires grown in [001] direction on InP (001)
- 13 September 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (11), 2077-2079
- https://doi.org/10.1063/1.1784548
Abstract
We report on nanowires grown by metalorganic vapor phase epitaxy directly on substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately , whereas grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates.
Keywords
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