Atomic force microscopy on homoepitaxial SrTiO3 films grown under monitoring of intensity oscillation in reflection high energy electron diffraction
- 30 November 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (22), 2659-2661
- https://doi.org/10.1063/1.108100
Abstract
Homoepitaxial SrTiO3 film growth by laser molecular beam epitaxy (MBE) was tuned up to a level as to give not only fine streak in the reflection high energy electron diffraction (RHEED) pattern but also the intensity oscillation persisting more than 70 unit cell lengths. The films thus produced were verified to have atomically flat surfaces (root‐mean‐square roughness of 0.12 nm) and very high crystal quality (χmin of 2%) by the analyses of atomic force microscopy and the Rutherford backscattering, respectively.Keywords
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