Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors
- 28 January 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 92 (4), 048301
- https://doi.org/10.1103/physrevlett.92.048301
Abstract
This Letter focuses on the role of contacts and the influence of Schottky barriers on the switching in nanotransistors. Specifically, we discuss (i) the mechanism for injection from a three-dimensional metal into a low-dimensional semiconductor, i.e., the competition between thermionic emission and thermally assisted tunneling, (ii) the factors that affect tunneling probability with emphasis on the importance of the effective mass for transistor applications, and (iii) a novel approach that enables determination of barrier presence and its actual height.Keywords
This publication has 13 references indexed in Scilit:
- Lateral Scaling in Carbon-Nanotube Field-Effect TransistorsPhysical Review Letters, 2003
- Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistorsApplied Physics Letters, 2002
- Field-Modulated Carrier Transport in Carbon Nanotube TransistorsPhysical Review Letters, 2002
- Carbon Nanotubes as Schottky Barrier TransistorsPhysical Review Letters, 2002
- High-Mobility Nanotube Transistor MemoryNano Letters, 2002
- Logic Gates and Computation from Assembled Nanowire Building BlocksScience, 2001
- Quantum Interference and Ballistic Transmission in Nanotube Electron WaveguidesPhysical Review Letters, 2001
- Carbon Nanotubes as Molecular Quantum WiresPhysics Today, 1999
- Electronic Transport in Mesoscopic SystemsPhysics Today, 1996
- Short-channel effect in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989