Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET's
- 1 April 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (4), 839-844
- https://doi.org/10.1109/t-ed.1987.23004
Abstract
Degradation of device characterisitics due to hot-carrier injection in submicrometer PMOSFET has been investigated. We found that in submicrometer p-channel transistors the punchthrough voltage is seriously reduced due to hot-electon-induced punchthrough (HEIP). A worst case analysis of the experimental data shows substantially reduced lifetime due to HEIP.Keywords
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