Analysis and prediction of stability in commercial, 1200 V, 33A, 4H-SiC MOSFETs
- 1 April 2012
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2012 IEEE International Reliability Physics Symposium (IRPS)
- No. 15417026,p. 3D.3.1-3D.3.5
- https://doi.org/10.1109/irps.2012.6241817
Abstract
State-of-the-art, commercially available, 4H-SiC MOSFETs are evaluated for stability under high-temperature over-voltage and pulsed over-current conditions. The devices show maximum vulnerability under high-temperature accumulation stress, demonstrating that the gate oxide is more prone to hole trapping than to electron trapping. The power MOSFET architecture coupled with a high interface trap density enables us to predict the stability of the device through a simple evaluation of the free-wheeling diode ideality factor (η) of the unstressed device. The pulsed over-current operation results in degradation similar to electron trapping at high temperature, presumably due to overheating of the device beyond its specified junction temperature. Over-current degradation is more severe at high switching frequency.Keywords
This publication has 11 references indexed in Scilit:
- Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistorJournal of Applied Physics, 2006
- SiC power-switching devices-the second electronics revolution?Proceedings of the IEEE, 2002
- Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxideIEEE Electron Device Letters, 2001
- High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopyApplied Physics Letters, 2000
- Valence band offset and hole injection at the 4H-, 6H-SiC/SiO2 interfacesApplied Physics Letters, 2000
- Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETsMaterials Science Forum, 2000
- Bonding Arrangements at theandInterfaces and a Possible Origin of their Contrasting PropertiesPhysical Review Letters, 2000
- Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiCIEEE Transactions on Electron Devices, 1999
- Advances in SiC MOS Technologyphysica status solidi (a), 1997
- Band offsets and electronic structure of SiC/SiO2 interfacesJournal of Applied Physics, 1996