Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors
- 20 February 2012
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (8), 083508
- https://doi.org/10.1063/1.3688046
Abstract
The electrical properties of negative capacitance (NC) ferroelectric field-effect transistors (FeFETs) were theoretically investigated in the temperature range from 280 to 360 K. The derived results indicate that for a fixed thickness of ferroelectric thin film the amplification of surface potential can be tuned by temperature. The transfer and output characteristics degrade with increasing temperature due to the gradual loss of ferroelectric NC effect. It is expected that the derived results may provide some insight into the design and performance improvement for the low power dissipation applications of FeFETs.Keywords
Funding Information
- National Natural Science Foundation of China (11032010)
- National Natural Science Foundation of China (51072171)
This publication has 16 references indexed in Scilit:
- Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructuresApplied Physics Letters, 2011
- The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structuresJournal of Applied Physics, 2011
- Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructuresJournal of Non-Crystalline Solids, 2010
- On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structuresMicroelectronic Engineering, 2008
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale DevicesNano Letters, 2007
- Negative capacitance in organic semiconductor devices: Bipolar injection and charge recombination mechanismApplied Physics Letters, 2007
- A novel method of electrical characterization of a semiconductor diode at forward biasSolid-State Electronics, 2006
- Observation of negative capacitance in a-SiC:H/a-Si:H UV photodetectorsSolid-State Electronics, 2006
- A computational model of ferroelectric domains. Part I: model formulation and domain switchingActa Materialia, 2005
- A Continuous, Analytic Drain-Current Model for DG MOSFETsIEEE Electron Device Letters, 2004