On Resonant Scatterers As a Factor Limiting Carrier Mobility in Graphene
- 26 August 2010
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 10 (10), 3868-3872
- https://doi.org/10.1021/nl101399r
Abstract
We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of ∼1% with respect to the G peak. We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity. If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities currently achievable in graphene on a substrate.Keywords
Other Versions
This publication has 36 references indexed in Scilit:
- Charge Transport in Graphene with Resonant ScatterersPhysical Review Letters, 2010
- How Perfect Can Graphene Be?Physical Review Letters, 2009
- The electronic properties of grapheneReviews of Modern Physics, 2009
- Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential ScatteringPhysical Review Letters, 2008
- A self-consistent theory for graphene transportProceedings of the National Academy of Sciences of the United States of America, 2007
- Electronic transport in graphene: A semiclassical approach including midgap statesPhysical Review B, 2007
- Electron transport in disordered graphenePhysical Review B, 2006
- Screening Effect and Impurity Scattering in Monolayer GrapheneJournal of the Physics Society Japan, 2006
- Quantum Hall Ferromagnetism in GraphenePhysical Review Letters, 2006
- Electronic properties of disordered two-dimensional carbonPhysical Review B, 2006