Investigation of the plasma treatment in a multistep TiN MOCVD process
- 31 January 2000
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 50 (1-4), 533-540
- https://doi.org/10.1016/s0167-9317(99)00324-x
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasmaApplied Physics Letters, 1996
- Synthesis of thin films by atmospheric pressure chemical vapor deposition using amido and imido titanium(IV) compounds as precursorsChemistry of Materials, 1990