Electric and Morphology Studies of Ohmic Contacts on AlGaN/GaN
- 1 January 2000
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructuresJournal of Applied Physics, 2000
- High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBEElectronics Letters, 2000
- High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxyApplied Physics Letters, 1999
- Study of contact formation in AlGaN/GaN heterostructuresApplied Physics Letters, 1997
- High Frequency AlGaN/GaN MODFET'sMRS Internet Journal of Nitride Semiconductor Research, 1997
- Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaNApplied Physics Letters, 1996
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- Low resistance ohmic contacts on wide band-gap GaNApplied Physics Letters, 1994