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A 5V Only 16Mbit Flash EEPROM Cell Using Highly Reliable Write/Erase Technologies
Home
Publications
A 5V Only 16Mbit Flash EEPROM Cell Using Highly Reliable Write/Erase Technologies
A 5V Only 16Mbit Flash EEPROM Cell Using Highly Reliable Write/Erase Technologies
NK
N. Kodama
N. Kodama
KS
K. Saitoh
K. Saitoh
HS
H. Shirai
H. Shirai
TO
T. Okazawa
T. Okazawa
YH
Y. Hokari
Y. Hokari
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1 January 1991
conference paper
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
75-76
https://doi.org/10.1109/vlsit.1991.705997
Abstract
No abstract available
Keywords
EPROM
THRESHOLD VOLTAGE
WRITING
TUNNELING
ELECTRON TRAPS
BORON
PULSE MEASUREMENTS
NATIONAL ELECTRIC CODE
DEGRADATION
TRANSISTORS
Cited by 11 articles