Enhancement of diffusion length in EFG ribbon solar cells under illumination

Abstract

The short‐circuit current, efficiency, and minority‐carrier diffusion length of EFG ribbon silicon solar cells have been measured as a function of illumination level between 0 and 5 suns and found to increase. The faster rate of increase of the current in ribbon cells compared to CZ we attribute to the enhancement of the minority‐carrier diffusion length under illumination. A quasicontinuous deep‐trap model with a Gaussian distribution of compensated donor states is proposed to account for these observations.