Universal disorder-induced transition in the resistivity behavior of strongly coupled metals
- 10 February 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (6), 647-650
- https://doi.org/10.1103/physrevlett.56.647
Abstract
At low temperatures ( ) a new universal transition in the resistivity behavior of strongly coupled superconductors has been demonstrated experimentally: The power-law behavior changes from (n=3–5) to as disorder increases, provided that the electron-phonon coupling λ is sufficiently high. The physics of the effect is probably based on the breakdown of the electron-phonon momentum-conservation law. Universal correlation allows independent estimates of λ.
Keywords
This publication has 18 references indexed in Scilit:
- Tunneling, resistive and structural study of NbN and other superconducting nitridesIEEE Transactions on Magnetics, 1985
- Superconducting and normal-state properties of vanadium nitridePhysical Review B, 1984
- Superconductivity and electrical resistivity of disordered Mo3Si thin films with A15 structure andPhysics Letters A, 1982
- Analysis of the normal-state resistivity for the neutron-irradiated superconductors Si, Pt, and AlPhysical Review B, 1982
- Pauli Limiting and the Possibility of Spin Fluctuations in theSuperconductorsPhysical Review Letters, 1981
- Strong depression of superconductivity in VN by spin fluctuationsPhysical Review B, 1980
- Low-temperature resistivity of ordered and disorderedcompoundsPhysical Review B, 1980
- Effects of Disorder on the Transition Temperature and Transport Properties of a Low- Superconductor: GePhysical Review Letters, 1978
- Phonon properties ofsuperconductors obtained from heat-capacity measurementsPhysical Review B, 1976
- The electrical resistance of potassium, tungsten, copper, tin and lead at low temperaturesPhysica, 1948